2019年翻译资格考试初级笔译模拟题：薄膜

　　采用真空顺序蒸发铜铟金属预置层后真空(硒化法)，以及真空三元叠层蒸发后氮气气氛退火的方法(叠层法)分别制备太阳电池吸收层材料CuInSe2薄膜。通过X谁信安衍射、扫描电子显微镜、能量色散X射线分析技术等分析手段对薄膜进行了表征。结果表明：两种方法制备的薄膜形貌都比较致密均匀，晶粒直径分别约1.5μm和1μm。成分分析表明所制薄膜均为富铜CIS.硒化法制备的CIS薄膜具有单一的黄铜矿相结构;而叠层法制备的薄膜含有少量杂相，如β-2In2 Se2等。因此硒化法制备的薄膜更适用于座位太阳能吸收层材料。

　　参考译文

　　Abstract: The CuInSe 2(CIS) films were fabricated by selenization of evaporated metallic precursors and vacuum evaporation of stacked elemental layers(SEL) followed by a thermal annealing step. The morphology, microstructure and composition of the films were investigated by scanning electron microscopy(SEM), X-ray diffraction(XRD) and energy dispersive X-ray spectroscopy(EDX). The results show that these two thin films are both compact and uniform. The grain sizes of the two kinds of films are 1.5 μm and 1.0 μm, respectively.All the films made by the two methods are Cu-rich and show p-type conduction. However, the CIS thin films fabricated by the former method consist of a single phase of chalcopyrite structure, while those films fabricated by the later method contain impurity phases such as β-In 2Se 3 besides CIS phase. Thus the former method is better for fabricating the CIS absorber in solar cells.